GRW T-Era of PV

  • Full Platform Support
  • High Resistivity Concentration
  • Good Gettering Performance

0.7-1.4

Resistivity

≤6E+17

Oxygen Content

≤5E+16

Carbon Content

≥1000

Minority Carrier Lifetime

Materials Performance

Item

Growth Mode

Crystallinity

Geometric dimensions

Thickness

Specification

CZ

Monocrystalline

G10-L:182.2*183.75*φ256mm M11-L:182.2*191.6*φ262.5

130±8μm

Inspection Method

- -

- -

Wafer inspection system

Wafer inspection system

Electrical Property

Item

Resistivity

Minority Carrier Lifetime

Oxygen Content

Carbon Content

Specification

0.7-1.4 Ω.cm

≥1000/μs

≤6E+17 at/cm³

≤5E+16 at/cm³

Inspection Method

Wafer inspection system

Transient with injection level: 5E14 cm-3(Sinton BCT-400 )

FTIR spectrometer

FTIR spectrometer

Low-degradation Monocrystalline

Through the improvement of the quality of monocrystalline silicon wafers and the optimization of the cell-side process, monocrystalline has basically solved the initial attenuation problem and disclosed this technology to the entire industry.

Automation and Intelligence

Intelligent manufacturing can improve the effective production capacity, greatly reducing the number of workers and improving the consistency of the crystal growth process. Smart automation tools are used to control the single crystal furnace, reducing human intervention in the crystal growth process.

Materials Innovation

The costs of non-silicon raw and auxiliary materials used in crystal pulling account for about 25% of the total cost. Prolonging the service life of non-silicon raw and auxiliary materials is an important way to reduce the crystal-pulling cost. Examples include carbon-carbon composite materials and crucible coating technology.

Advanced Wafer Slicing

Advanced wafer slicing techniques can greatly improve the yield per kilogram of monocrystalline and the slicing capacity, contributing greatly to the value of the product and supporting ongoing cost reductions of monocrystalline and polycrystalline silicon wafers.

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